An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump

Abstract

Abstract In this paper, an NMOS output-capacitorless low-dropout regulator (OCL-LDO) featuring dual-loop regulation has been proposed, achieving fast transient response with low power consumption. An event-driven charge pump (CP) loop with the dynamic strength control (DSC), is proposed in this paper, which overcomes trade-offs inherent in conventional structures. The presented design addresses and resolves the large signal stability issue, which has been previously overlooked in the event-driven charge pump structure. This breakthrough allows for the full exploitation of the charge-pump structure's potential, particularly in enhancing transient recovery. Moreover, a dynamic error amplifier is utilized to attain precise regulation of the steady-state output voltage, leading to favorable static characteristics. A prototype chip has been fabricated in 65 nm CMOS technology. The measurement results show that the proposed OCL-LDO achieves a 410 nA low quiescent current (I Q) and can recover within 30 ns under 200 mA/10 ns loading change.