Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/1674-4926/39/i=5/a=054001/pdf
Reference28 articles.
1. An Extremely Low Sub-Threshold Swing UTB SOI Tunnel-FET Structure Suitable for Low-Power Applications
2. Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric
3. Low-Voltage Tunnel Transistors for Beyond CMOS Logic
4. Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design analysis of Gate-All-Around nanowire tunnel field effect transistor;Materials Today: Proceedings;2021
2. Investigation of geometrical and doping parameter variations on GaSb/Si‐based double gate tunnel FETs: A qualitative and quantitative approach for RF performance enhancement;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-07-15
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