Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Development of plasma etching process for sub-50 nm TaN gate
2. Dry Etching of TaN/HfO2Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma
3. Plasma Etching for Sub-45-nm TaN Metal Gates on High-$k$ Dielectrics
4. Dry etching of TaN∕HfO2 gate-stack structure in BCl3∕Ar∕O2 inductively coupled plasmas
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication Technique for pMOSFET poly-Si/TaN/TiN/HfSiAlON Gate Stack;ECS Journal of Solid State Science and Technology;2018
2. Dry Etching of Metal Inserted Poly-Si Stack for Dual High-k and Dual Metal Gate Integration;ECS Journal of Solid State Science and Technology;2018
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