Dry Etching of TaN/HfO2Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma-Reference-Cited by-同舟云学术

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Dry Etching of TaN/HfO2Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

Published:2005-07-26 Issue:7B Volume:44 Page:5811-5818
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shin Myoung Hun,Na Sung-Woong,Lee Nae-Eung,Oh Tae Kwan,Kim Jiyoung,Lee Taeho,Ahn Jinho

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tungsten/Silicon Oxide/Titanium Nitride Stack Etching;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

2. Dry Etching of Metal Inserted Poly-Si Stack for Dual High-k and Dual Metal Gate Integration;ECS Journal of Solid State Science and Technology;2018

3. Chemical Reaction on Etched TaNO Thin Film as O2 Content Varies in CF4/Ar Gas Mixing Plasma;Transactions on Electrical and Electronic Materials;2017-04-25

4. Influence of Oxygen Additions on the Etch Characteristics of TaN Thin Films in CF4/Ar Plasma;Journal of Nanoscience and Nanotechnology;2016-12-01

5. Etching Characteristics of Titanium Nitride in Chlorine-Based Plasma;Journal of Nanoscience and Nanotechnology;2016-12-01

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