Growth and properties of GaAs nanowires on fused quartz substrate-Reference-Cited by-同舟云学术

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Growth and properties of GaAs nanowires on fused quartz substrate

Published:2014-09 Issue:9 Volume:35 Page:093002
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Zhao Yufeng,Li Xinhua,Wang Wenbo,Zhou Bukang,Duan Huahua,Shi Tongfei,Zeng Xuesong,Ning Li,Wang Yuqi

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/35/i=9/a=093002/pdf

Reference30 articles.

1. Tunable Supercurrent Through Semiconductor Nanowires

2. Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?

3. Nanoelectronics from the bottom up

4. Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes

5. A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications;Progress in Quantum Electronics;2018-09

2. Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2017-12

3. Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy;Journal of Semiconductors;2017-10

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