Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy

Published:2017-12 Issue: Volume:480 Page:67-73
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Liudi Mulyo Andreas,Konno Yuta,Nilsen Julie S.,van Helvoort Antonius T.J.,Fimland Bjørn-Ove,Weman Helge,Kishino Katsumi

Funder

FRINATEK

NANO2021

Research Council of Norway and by Japan Society for the Promotion of Science KAKENHI

Norwegian PhD Network on Nanotechnology for Microsystems

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference69 articles.

1. AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) ferroelectric polymer gating;Liu;Sci. Rep.,2015

2. GaN Electronics;Pearton;Adv. Mater.,2000

3. GaN membrane metal-semiconductor-metal ultraviolet photodetector;Müller;Appl. Opt.,2008

4. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates;Nakamura;Appl. Phys. Lett.,1998

5. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes;Nakamura;Appl. Phys. Lett.,1994

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