Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma-Reference-Cited by-同舟云学术

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Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma

Published:2012-10 Issue:10 Volume:33 Page:102003
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Zhang Xu,Rao Feng,Liu Bo,Peng Cheng,Zhou Xilin,Yao Dongning,Guo Xiaohui,Song Sannian,Wang Liangyong,Cheng Yan,Wu Liangcai,Song Zhitang,Feng Songlin

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Al1.3Sb3Te material for phase change memory application

2. Reactive Ion Etching of Ge[sub 2]Sb[sub 2]Te[sub 5] in CHF[sub 3]∕O[sub 2] Plasma for Nonvolatile Phase-Change Memory Device

3. Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5

4. Etch Damage of Ge$_{2}$Sb$_{2}$Te$_{5}$ for Different Halogen Gases

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