Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems

Author:

Askerov Sh. G.,Abdullayeva L. K.,Hasanov M. G.

Abstract

Abstract The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact (MSC) in the framework of the theory of complex systems. The effect of inhomogeneity of the different microstructures: polycrystalline, monocrystalline, amorphous metal–semiconductor contact surface is investigated, considering a Schottky diode (SD) as a parallel connection of numerous subdiodes. It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system, which consists of parallel connected numerous elementary contacts having different properties and parameters.

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. A heterogeneous model of the MSC;Askerov;Materials of the III All-Union Scientific Technical Seminar,1984

2. Kinetic aspects of high-temperature interaction of titanium alloys with gaseous mediums;Trush;J Mod Technol Eng,2018

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