Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser-Reference-Cited by-同舟云学术

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Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser

Published:2015-09 Issue:9 Volume:36 Page:094010
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Ke Qing,Tan Shaoyang,Liu Songtao,Lu Dan,Zhang Ruikang,Wang Wei,Ji Chen

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/36/i=9/a=094010/pdf

Reference12 articles.

1. Very high power 1310nm InP single mode distributed feed back laser diode with reduced linewidth

2. 1.5 [micro sign]m wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power

3. Optimization studies of single transverse mode 1.55 μm ridge-waveguide lasers

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2. InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure;AIP Advances;2023-07-01

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