1.5 [micro sign]m wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power-Reference-Cited by-同舟云学术

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1.5 [micro sign]m wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power

Published:1996 Issue:18 Volume:32 Page:1717
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Garbuzov D.,Xu L.,Forrest S.R.,Menna R.,Martinelli R.,Connolly J.C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19961098?crawler=true&mimetype=application/pdf

Reference8 articles.

1. Very low threshold single quantum well graded‐index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy

2. Low-threshold-current-density 1.5 mu m lasers using compressively strained InGaAsP quantum wells

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