Total dose responses and reliability issues of 65 nm NMOSFETs-Reference-Cited by-同舟云学术

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Total dose responses and reliability issues of 65 nm NMOSFETs

Published:2016-06 Issue:6 Volume:37 Page:064016
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Dezhao Yu,Qiwen Zheng,Jiangwei Cui,Hang Zhou,Xuefeng Yu,Qi Guo

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/37/i=6/a=064016/pdf

Reference15 articles.

1. Hot-electron effects in Silicon-on-insulator n-channel MOSFET's

2. CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the Combined Effect of Total Ionizing Dose and Time-Dependent Dielectric Breakdown on PDSOI Devices;Micromachines;2022-08-30

2. TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects;IEEE Transactions on Nuclear Science;2021-08

3. Differential Structure of Inductive Proximity Sensor;Sensors;2019-05-13

4. Dimension-Reduced Analog—Digital Mixed Measurement Method of Inductive Proximity Sensor;Sensors;2017-06-30

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