Influence of the thickness change of the wave-guide layers on the threshold current of GaAs-based laser diode
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/1674-4926/37/i=8/a=084007/pdf
Reference19 articles.
1. A 6-b 600 MS/s SAR ADC with a new switching procedure of 2-b/stage and self-locking comparators
2. A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current
3. Threshold current density reduction of strained AlInGaAs quantum-well laser
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