Author:
Liu Songtao,Khope Akhilesh
Abstract
Abstract
Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature. Driven by the size, weight, power and cost (SWaP-C) requirements, the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward. Several approaches have been proposed and demonstrated to address this issue. In this paper, a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented. Representative device demonstrations, including ultra-narrow linewidth III–V/Si lasers, fully integrated III–V/Si/Si3N4 lasers, high-channel count mode locked quantum dot (QD) lasers, and high gain QD amplifiers will be covered.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
10 articles.
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