Influence of surface stress in the determination of the (2 2 0) lattice spacing of silicon
Author:
Publisher
IOP Publishing
Subject
General Engineering
Link
http://stacks.iop.org/0026-1394/45/i=1/a=015/pdf
Reference23 articles.
1. History and progress in the accurate determination of the Avogadro constant
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4. Confirmation of the INRiM and PTB Determinations of the Si Lattice Parameter
5. Effects of analyser deformation in scanning x-ray interferometry
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1. Use of Dependence of the Edge Effect and X-Ray Focusing for the Interpretation of X-Ray Diffraction Patterns;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-05
2. Density functional theory calculations of the stress of oxidised (1 1 0) silicon surfaces;Metrologia;2016-11-04
3. X-ray interferometric study of the stress-deformed state of crystalline materials;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2015-03
4. A finite element analysis of surface-stress effects on measurement of the Si lattice parameter;Metrologia;2013-05-13
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