Confirmation of the INRiM and PTB Determinations of the Si Lattice Parameter-Reference-Cited by-同舟云学术

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Confirmation of the INRiM and PTB Determinations of the Si Lattice Parameter

Published:2007-04 Issue:2 Volume:56 Page:230-234
ISSN:0018-9456
Container-title:IEEE Transactions on Instrumentation and Measurement
language:
Short-container-title:IEEE Trans. Instrum. Meas.

Author:

Hao L.,Macfarlane J.C.,Gallop J.C.,Cox D.,Joseph-Franks P.,Hutson D.,Chen J.,Lam S.K.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx5/19/4126824/04126828.pdf?arnumber=4126828

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Measurement of the Silicon Lattice Parameter and the Count of Atoms to Realise the Kilogram;MAPAN;2020-11-19

2. The Lattice Spacing Variability of Intrinsic Float-Zone Silicon;Journal of Research of the National Institute of Standards and Technology;2017-05-11

3. Realization of the kilogram by the XRCD method;Metrologia;2016-09-28

4. Progress on accurate measurement of the Planck constant: Watt balance and counting atoms;Chinese Physics B;2015-01

5. Precise silicon die curvature measurements using the NIST lattice comparator: comparisons with coherent gradient sensing interferometry;Metrologia;2011-04-19

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