Molecular dynamics simulations of extended defects and their evolution in 3C–SiC by different potentials
Author:
Publisher
IOP Publishing
Subject
Computer Science Applications,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Modeling and Simulation
Link
http://iopscience.iop.org/article/10.1088/1361-651X/ab50c7/pdf
Reference42 articles.
1. Optical investigation of bulk electron mobility in 3C–SiC films on Si substrates
2. Hall measurements as a function of temperature on monocrystalline SiC thin films
3. High mobility β-SiC epilayer prepared by low-pressure rapid thermal chemical vapor deposition on a (100) silicon substrate
4. Fabrication and Characterization of 3C-SiC-Based MOSFETs
5. Nitric Acid Oxidation of 3C-SiC to Fabricate MOS Diodes with a Low Leakage Current Density
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