Simulation of chemical reactions with methanol and oxalic acid on 4H-SiC surfaces before and after nanoabrasion-Reference-Cited by-同舟云学术

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Simulation of chemical reactions with methanol and oxalic acid on 4H-SiC surfaces before and after nanoabrasion

Published:2024-12 Issue: Volume:677 Page:161035
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jiang Wei,Chen Jiapeng,Wu Xiongjie^ORCID,Wu Lin,Yi Jiangfan,Jiang Zhenlin,Wang Baoxiu,Wang Wenjun,Wei Ying,Sun Tao^ORCID

Publisher

Elsevier BV

Reference39 articles.

1. Molecular dynamics simulation of SiC removal mechanism in a fixed abrasive polishing process;Zhou;Ceram. Int.,2019

2. Mechanism of friction-induced chemical reaction high-efficient polishing single crystal 4H-SiC wafer using pure iron;Wu;Tribol. Int.,2024

3. Removal mechanism of 4H- and 6H-SiC substrates (0001 and 0001¯) in mechanical planarization machining;Lu;Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture,2019

4. Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates;Tian;Int. J. Extrem. Manuf.,2020

5. Defect engineering in SiC technology for high-voltage power devices;Kimoto;Appl. Phys. Express,2020

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