Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

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Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition

Published:2014-09-16 Issue:40 Volume:25 Page:405705
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Saeed Saba,Buters Frank,Dohnalova Katerina,Wosinski Lech,Gregorkiewicz Tom

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/25/i=40/a=405705/pdf

Reference48 articles.

1. Band gap engineering of amorphous silicon quantum dots for light-emitting diodes

2. Biocompatible Luminescent Silicon Quantum Dots for Imaging of Cancer Cells

3. Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications

4. Nanocrystalline Semiconductors: Synthesis, Properties, and Perspectives

5. Nanocrystals for Electronics

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1. Efficient and stable energy conversion using 2D/3D mixed Sn-perovskite photovoltaics with antisolvent engineering;Energy;2023-09

2. Spectroscopic characterization of phase transformation in Ge-rich Al2O3 films grown by magnetron co-sputtering;Materials Letters;2020-10

3. Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots;Scientific Reports;2017-10-31

4. Tight-binding simulation of silicon and germanium nanocrystals;Semiconductors;2017-10

5. Si and Ge nanocrystals in resonator multilayer structures;physica status solidi (a);2016-10-07

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