Low-temperature electron mobility in Ga0.5In0.5P/GaAs quantum wells
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/14/i=9/a=305/pdf
Reference18 articles.
1. High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors
2. High linearity power X-band GaInP/GaAs heterojunction bipolar transistor
3. A GSMBE grown GaInP/GaAs narrow base DHBT exhibiting N-shape negative differential resistance with variable peak-to-valley current ratio up to 1/spl times/10/sup 7/ at room temperature
4. Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures
5. Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. μ-EXAFS, μ-XRF, and μ-PL Characterization of a Multi-Quantum-Well Electroabsorption Modulated Laser Realized via Selective Area Growth;Small;2011-03-15
2. Effect of electric field on low temperature multisubband electron mobility in a coupled Ga0.5In0.5P/GaAs quantum well structure;Journal of Applied Physics;2010-06
3. Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure;Semiconductor Science and Technology;2009-08-25
4. Finite-temperature Hubbard local field corrections on electron mobility in strictly 2D electron gas;Journal of Physics: Conference Series;2007-04-01
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