1D versus 3D quantum confinement in 1–5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices-Reference-Cited by-同舟云学术

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1D versus 3D quantum confinement in 1–5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices

Published:2016-05-27 Issue:27 Volume:27 Page:275205
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

El-Atab Nazek,Nayfeh Ammar

Funder

Masdar Institute of Science and Technology

Office of Naval Research Global

L Oreal-UNESCO For Women in Science Middle East

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/27/i=27/a=275205/pdf

Reference35 articles.

1. The effects of zinc nitrate, zinc acetate and zinc chloride precursors on investigation of structural and optical properties of ZnO thin films

2. Synthesis and characterization of multipod, flower-like, and shuttle-like ZnO frameworks in ionic liquids

3. A comprehensive review of ZnO materials and devices

4. Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

5. A template-free, sonochemical route to porous ZnO nano-disks

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