Abstract
Abstract
In this work we use conductive atomic force microscopy (cAFM) to study the charge injection process from a nanoscale tip to a single isolated bilayer 2D MoS2 flake. The MoS2 is exfoliated and bonded to ultra-thin SiO2/Si substrate. Local current–voltage (IV) measurements conducted by cAFM provides insight in charge trapping/de-trapping mechanisms at the MoS2/SiO2 interface. The MoS2 nano-flake provides an adjustable potential barrier for embedded trap sites where the charge is injected from AFM tip is confined at the interface. A window of (ΔV ∼ 1.8 V) is obtain at a reading current of 2 nA between two consecutive IV sweeps. This is a sufficient window to differentiate between the two states indicating memory behavior. Furthermore, the physics behind the charge entrapment and its contribution to the tunneling mechanisms is discussed.
Funder
Khalifa University of Science, Technology and Research
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Cited by
3 articles.
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