Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots–SiO2composite/p-AlGaN heterojunction light-emitting diodes-Reference-Cited by-同舟云学术

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Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots–SiO2composite/p-AlGaN heterojunction light-emitting diodes

Published:2009-03-31 Issue:16 Volume:20 Page:165201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Shih Ying Tsang,Wu Mong Kai,Li Wei Chih,Kuan Hon,Yang Jer Ren,Shiojiri Makoto,Chen Miin Jang

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/20/i=16/a=165201/pdf

Reference35 articles.

1. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

2. ZnO p-n junction light-emitting diodes fabricated on sapphire substrates

3. ZnO as a novel photonic material for the UV region

4. ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition

5. Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

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