Nanometer size field effect transistors for terahertz detectors-Reference-Cited by-同舟云学术

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Nanometer size field effect transistors for terahertz detectors

Published:2013-04-25 Issue:21 Volume:24 Page:214002
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Knap W,Rumyantsev S,Vitiello M S,Coquillat D,Blin S,Dyakonova N,Shur M,Teppe F,Tredicucci A,Nagatsuma T

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/24/i=21/a=214002/pdf

Reference61 articles.

1. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current

2. Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid

3. Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

4. Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

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1. Valley-dependent quasi-ballistic electron transport in FETs based on multi-valley semiconductors;AIP Advances;2024-07-01

2. Modeling of Antenna-Coupled Si MOSFETs in the Terahertz Frequency Range;IEEE Transactions on Terahertz Science and Technology;2024-05

3. Mapping the slow and fast photoresponse of field-effect transistors to terahertz and infrared radiation;Optics Express;2024-02-23

4. The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector;Sensors;2023-06-06

5. 0.2-4.0 THz broadband terahertz detector based on antenna-coupled AlGaN/GaN HEMTs arrayed in a bow-tie pattern;Optics Express;2023-03-09

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