Flexible, transparent and ultra-broadband photodetector based on large-area WSe2film for wearable devices-Reference-Cited by-同舟云学术

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Flexible, transparent and ultra-broadband photodetector based on large-area WSe2film for wearable devices

Published:2016-04-25 Issue:22 Volume:27 Page:225501
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Zheng Zhaoqiang,Zhang Tanmei,Yao Jiandomg,Zhang Yi,Xu Jiarui,Yang Guowei

Funder

The National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/27/i=22/a=225501/pdf

Reference44 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Ultrasensitive photodetectors based on monolayer MoS2

3. Hybrid 2D-0D MoS2-PbS Quantum Dot Photodetectors

4. Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection

5. Single-layer MoS2 transistors

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1. NO sensing properties of MoS2/WSe2 heterostructure at room temperature under UV light irradiation;Sensors and Actuators B: Chemical;2024-12

2. Graphene electrode-enhanced InSe/WSe2 van der Waals heterostructure for high-performance broadband photodetector with imaging capabilities;Journal of Alloys and Compounds;2024-11

3. Photoelectrochemical Photodetectors Based on WSe2/rGO Hybrid Structure with Enhanced Performance;Journal of Electronic Materials;2024-08-30

4. Controlled growth of asymmetric chiral TeOx for broad-spectrum, high-responsivity and polarization-sensitive photodetection;The Journal of Chemical Physics;2024-08-22

5. Far-Reaching Remote Doping for Monolayer MoS₂ Using a Ferroelectric Substrate: Unveiling the Impact of h-BN Spacer Thickness;ACS Applied Electronic Materials;2024-08-09

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