Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization-Reference-Cited by-同舟云学术

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Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization

Published:2015-02-13 Issue:9 Volume:26 Page:095202
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Han Cheng,Xiang Du,Zheng Minrui,Lin Jiadan,Zhong Jianqiang,Haur Sow Chorng,Chen Wei

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/26/i=9/a=095202/pdf

Reference35 articles.

1. Growth and optical properties of axial hybrid III–V/silicon nanowires

2. Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon

3. A nanoscale combing technique for the large-scale assembly of highly aligned nanowires

4. Nanowire photonics

5. Synthesis, Characterization, and Applications of ZnO Nanowires

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1. Development of in situ characterization techniques in molecular beam epitaxy;Journal of Semiconductors;2024-03-01

2. Homojunction Interface Boosts Hole-Carrier Injection in p-Type CuI Nanoribbon Field-Effect Transistors;ACS Applied Electronic Materials;2024-02-19

3. First-principles study on stability, electronic and optical properties of Janus-functionalized ZnO monolayer and bilayer for optoelectronic device;Vacuum;2020-11

4. Electric Noise in Field-Effect Transistors Based on ZnO:Li Films;Journal of Contemporary Physics (Armenian Academy of Sciences);2020-04

5. Identification and control of defects in nitrogen-doped ZnO;Chinese Science Bulletin;2020-03-12

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