Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles-Reference-Cited by-同舟云学术

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Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles

Published:2010-07-15 Issue:31 Volume:21 Page:315201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

de Luna Bugallo Andres,Tchernycheva Maria,Jacopin Gwenole,Rigutti Lorenzo,Julien François Henri,Chou Shu-Ting,Lin Yuan-Ting,Tseng Po-Han,Tu Li-Wei

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=31/a=315201/pdf

Reference29 articles.

1. Short-wavelength solar-blind detectors-status, prospects, and markets

2. III nitrides and UV detection

3. Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy

4. Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties

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4. Fabrication of freestanding GaN nanobelts with enhanced ultraviolet photoresponse performance;Applied Surface Science;2023-03

5. High-Performance Self-Driven Single GaN-Based p–i–n Homojunction One-Dimensional Microwire Ultraviolet Photodetectors;ACS Applied Electronic Materials;2022-08-04

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