Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well-Reference-Cited by-同舟云学术

Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well

Published:2007-06-05 Issue:26 Volume:18 Page:265402
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Yeh Dong-Ming,Chen Cheng-Yen,Lu Yen-Cheng,Huang Chi-Feng,Yang C C

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/18/i=26/a=265402/pdf

Reference11 articles.

1. Prestrained effect on the emission properties of InGaN∕GaN quantum-well structures

2. Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure

3. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

4. Surface-plasmon-enhanced light emitters based on InGaN quantum wells

5. Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy

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