Enhanced resistive switching in forming-free graphene oxide films embedded with gold nanoparticles deposited by electrophoresis-Reference-Cited by-同舟云学术

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Enhanced resistive switching in forming-free graphene oxide films embedded with gold nanoparticles deposited by electrophoresis

Published:2015-11-23 Issue:1 Volume:27 Page:015702
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Khurana Geetika,Misra Pankaj,Kumar Nitu,Kooriyattil Sudheendran,Scott James F,Katiyar Ram S

Funder

National Science Foundation

Department of Energy

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/27/i=1/a=015702/pdf

Reference38 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Resistive switching in transition metal oxides

3. Emerging memories: resistive switching mechanisms and current status

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

5. Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

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