Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure-Reference-Cited by-同舟云学术

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Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure

Published:2010-12-22 Issue:5 Volume:22 Page:055703
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Lu W,Bozkurt M,Keizer J G,Rohel T,Folliot H,Bertru N,Koenraad P M

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/22/i=5/a=055703/pdf

Reference21 articles.

1. Quantum dot lasers: From promise to high-performance devices

2. High-gain and low-threshold InAs quantum-dot lasers on InP

3. An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots

4. Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

5. An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of strain reduced In0.54Al0.34Ga0.12As layer of vertically coupled QDs arrays for O-band telecom single photon sources;Journal of Alloys and Compounds;2023-10

2. Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots;Nanomaterials;2021-01-03

3. Strain-Induced Surface Micro/Nanosphere Structure: A New Technique to Design Mechanically Robust Superhydrophobic Surfaces with Rose Petal-Like Morphology;Advanced Materials Interfaces;2017-07-31

4. Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb;Applied Physics Letters;2014-07-21

5. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing;Applied Physics Letters;2012-12-10

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