Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs-Reference-Cited by-同舟云学术

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Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs

Published:2002-09-20 Issue:5 Volume:13 Page:666-668
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Maximov I,Carlberg P,Wallin D,Shorubalko I,Seifert W,Xu H Q,Montelius L,Samuelson L

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/13/i=5/a=325/pdf

Reference10 articles.

1. Quantized conductance in a heterostructurally defined Ga0.25In0.75As/InP quantum wire

2. Electrical properties of three-terminal ballistic junctions

3. Bias-voltage-induced asymmetry in nanoelectronic Y-branches

4. Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions

5. High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch

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