Ground state lasing at 1.30 µm from InAs/GaAs quantum dot lasers grown by metal–organic chemical vapor deposition-Reference-Cited by-同舟云学术

Ground state lasing at 1.30 µm from InAs/GaAs quantum dot lasers grown by metal–organic chemical vapor deposition

Published:2010-02-16 Issue:10 Volume:21 Page:105604
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Guimard Denis,Ishida Mitsuru,Bordel Damien,Li Lin,Nishioka Masao,Tanaka Yu,Ekawa Mitsuru,Sudo Hisao,Yamamoto Tsuyoshi,Kondo Hayato,Sugawara Mitsuru,Arakawa Yasuhiko

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=10/a=105604/pdf

Reference24 articles.

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4. Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots

5. Annealing effects on faceting of InAs∕GaAs(001) quantum dots

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