High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2nanomasks-Reference-Cited by-同舟云学术

High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2nanomasks

Published:2012-01-06 Issue:4 Volume:23 Page:045303
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Chiu Ching-Hsueh,Lin Chien-Chung,Han Hau-Vei,Liu Che-Yu,Chen Yan-Hao,Lan Yu-Pin,Yu Peichen,Kuo Hao-Chung,Lu Tien-Chang,Wang Shing-Chung,Chang Chun-Yen

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=4/a=045303/pdf

Reference19 articles.

1. Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip

2. Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

3. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

4. Anisotropic epitaxial lateral growth in GaN selective area epitaxy

5. Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

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