The dependence of the Schottky barrier height on carbon nanotube diameter for Pd–carbon nanotube contacts-Reference-Cited by-同舟云学术

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The dependence of the Schottky barrier height on carbon nanotube diameter for Pd–carbon nanotube contacts

Published:2009-04-03 Issue:17 Volume:20 Page:175204
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Svensson Johannes,Sourab Abdelrahim A,Tarakanov Yury,Lee Dong Su,Park Seung Joo,Baek Seung Jae,Park Yung Woo,Campbell Eleanor E B

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/20/i=17/a=175204/pdf

Reference29 articles.

1. Field-Modulated Carrier Transport in Carbon Nanotube Transistors

2. Formation of an electric dipole at metal-semiconductor interfaces

3. Size-Dependent Effects on Electrical Contacts to Nanotubes and Nanowires

4. Role of Fermi-Level Pinning in Nanotube Schottky Diodes

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