Designer germanium quantum dot phototransistor for near infrared optical detection and amplification-Reference-Cited by-同舟云学术

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Designer germanium quantum dot phototransistor for near infrared optical detection and amplification

Published:2015-01-15 Issue:5 Volume:26 Page:055203
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Kuo M H,Lai W T,Hsu T M,Chen Y C,Chang C W,Chang W H,Li P W

Funder

Ministry of Science and Technology of Taiwan, Republic of China.

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/26/i=5/a=055203/pdf

Reference38 articles.

1. The evolution of scaling from the homogeneous era to the heterogeneous era

2. Multi-gate SOI MOSFETs

3. Interconnect challenges for nanoscale electronic circuits

4. Rationale and challenges for optical interconnects to electronic chips

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1. Self-Organized Germanium Quantum Dots/Si₃N₄ Enabling Monolithic Integration of Top Si₃N₄-Waveguided Microdisk Light Emitters and p-i-n Photodetectors for On-Chip Sensing;IEEE Transactions on Electron Devices;2023-04

2. The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms;Applied Physics A;2023-01-17

3. Improved rectification and transport properties of hybrid PEDOT:PSS/Ge/Si heterojunctions with Ge nanoclusters;Journal of Applied Physics;2020-08-28

4. ZnO nanoparticles enhanced near-infrared photodetection in organic phototransistors based on narrow bandgap polymer;Chinese Science Bulletin;2020-07-24

5. Perovskite Quantum Dots Based Phototransistors;Perovskite Quantum Dots;2020

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