Characterizing the geometry of InAs nanowires using mirror electron microscopy-Reference-Cited by-同舟云学术

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Characterizing the geometry of InAs nanowires using mirror electron microscopy

Published:2012-03-07 Issue:12 Volume:23 Page:125703
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Kennedy S M,Hjort M,Mandl B,Marsell E,Zakharov A A,Mikkelsen A,Paganin D M,Jesson D E

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=12/a=125703/pdf

Reference50 articles.

1. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

2. Nanowire-based one-dimensional electronics

3. Growth and Optical Properties of Strained GaAs−GaxIn1-xP Core−Shell Nanowires

4. Direct imaging of the atomic structure inside a nanowire by scanning tunnelling microscopy

5. GaAs/AlGaAs Nanowire Heterostructures Studied by Scanning Tunneling Microscopy

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1. SIMULATION OF MIRROR ELECTRON MICROSCOPY CAUSTIC IMAGES IN THREE-DIMENSIONS;Surface Review and Letters;2018-01

2. Electron microscopy imaging of proteins on gallium phosphide semiconductor nanowires;Nanoscale;2016

3. Revealing Optical Properties of Reduced-Dimensionality Materials at Relevant Length Scales;Advanced Materials;2015-08-31

4. Surface morphology of Au-free grown nanowires after native oxide removal;Nanoscale;2015

5. Applications in Surface Science;Surface Microscopy with Low Energy Electrons;2014

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