Critical strain region evaluation of self-assembled semiconductor quantum dots-Reference-Cited by-同舟云学术

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Critical strain region evaluation of self-assembled semiconductor quantum dots

Published:2007-10-19 Issue:47 Volume:18 Page:475503
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Sales D L,Pizarro J,Galindo P L,Garcia R,Trevisi G,Frigeri P,Nasi L,Franchi S,Molina S I

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/18/i=47/a=475503/pdf

Reference39 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Transverse-electric-field-enhanced response in InAs∕AlGaAs∕GaAs quantum-dot infrared photodetectors

3. High-temperature operation normal incident 256/spl times/256 InAs-GaAs quantum-dot infrared photodetector focal plane array

4. 1.43 [micro sign]m InAs bilayer quantum dot lasers on GaAs substrate

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1. High resolution atomic scale characterization of dislocations in high entropy alloys: Critical assessment of template matching and geometric phase analysis;Ultramicroscopy;2020-12

2. Simulation of transmission electron microscopy images using a generalized single-slice approach: The case of self-assembled quantum dots;Materials Characterization;2020-06

3. Strain detection in crystalline heterostructures using bidimensional blocking patterns of channelled particles;Journal of Physics D: Applied Physics;2018-02-22

4. Surface evolution of a Pt–Pd–Au electrocatalyst for stable oxygen reduction;Nature Energy;2017-07-10

5. Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells;Applied Surface Science;2017-02

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