A stacked memory device on logic 3D technology for ultra-high-density data storage-Reference-Cited by-同舟云学术

A stacked memory device on logic 3D technology for ultra-high-density data storage

Published:2011-05-16 Issue:25 Volume:22 Page:254006
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Kim Jiyoung,Hong Augustin J,Kim Sung Min,Shin Kyeong-Sik,Song Emil B,Hwang Yongha,Xiu Faxian,Galatsis Kosmas,Chui Chi On,Candler Rob N,Choi Siyoung,Moon Joo-Tae,Wang Kang L

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/22/i=25/a=254006/pdf

Reference38 articles.

1. A novel high-density 5F/sup 2/ NAND STI cell technology suitable for 256 Mbit and 1 Gbit flash memories

2. Non-volatile memory technologies for beyond 2010

3. Memory technologies for 50 nm and beyond

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