Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results-Reference-Cited by-同舟云学术

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Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results

Published:2014-04-24 Issue:19 Volume:25 Page:195201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Barettin Daniele,De Angelis Roberta,Prosposito Paolo,Auf der Maur Matthias,Casalboni Mauro,Pecchia Alessandro

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/25/i=19/a=195201/pdf

Reference51 articles.

1. Red-Emitting Semiconductor Quantum Dot Lasers

2. 1.3 μm room-temperature GaAs-based quantum-dot laser

3. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

4. Red light-emitting diodes based on InP∕GaP quantum dots

5. Colour-tunable light-emitting diodes based on InP/GaP nanostructures

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1. State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots;Nanomaterials;2023-06-07

2. Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire;Nanomaterials;2023-05-25

3. Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs;Nanomaterials;2023-04-14

4. Direct Band Gap AlGaAs Wurtzite Nanowires;Nano Letters;2023-01-17

5. Optimization of InGaN quantum-dot based light-emitting diodes by means of cellular automata algorithms;Optical and Quantum Electronics;2022-06-06

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