Nanoscale patterning induced strain redistribution in ultrathin strained Si layers on oxide

Author:

Moutanabbir O,Reiche M,Hähnel A,Erfurth W,Gösele U,Motohashi M,Tarun A,Hayazawa N,Kawata S

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. The Strain Model for Globally Strained Silicon on Insulator Wafer Based on High-stress SiN Film Deposition;Silicon;2023-03-24

2. Strain relaxation of semiconductor membranes: insights from finite element modeling;Semiconductor Science and Technology;2023-02-17

3. Оцінка низькотемпературних параметрів обмінної взаємодії полікристалічних шарів в КНІ-структурах;Information and communication technologies, electronic engineering;2021-12

4. L-C- Electronic Elements Based on Silicon Microstructures;2020 IEEE XVIth International Conference on the Perspective Technologies and Methods in MEMS Design (MEMSTECH);2020-04

5. Frequency response in polycrystalline silicon films of SemOI-structures;2020 IEEE 15th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering (TCSET);2020-02

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