The fabrication of Ni quantum cross devices with a 17 nm junction and their current–voltage characteristics-Reference-Cited by-同舟云学术

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The fabrication of Ni quantum cross devices with a 17 nm junction and their current–voltage characteristics

Published:2009-11-30 Issue:1 Volume:21 Page:015301
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Kaiju Hideo,Kondo Kenji,Ono Akito,Kawaguchi Nobuyoshi,Won Jonghan,Hirata Akihiko,Ishimaru Manabu,Hirotsu Yoshihiko,Ishibashi Akira

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=1/a=015301/pdf

Reference19 articles.

1. Nanopatterning with UV Optical Lithography

2. Exposing extreme ultraviolet lithography at Intel

3. Circuit Fabrication at 17 nm Half-Pitch by Nanoimprint Lithography

4. Fabrication of 30 nm pitch imprint moulds by frequency doubling for nanowire arrays

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room-temperature magnetoresistance in Ni₇₈Fe₂₂/C8-BTBT/Ni₇₈Fe₂₂ nanojunctions fabricated from magnetic thin-film edges using a novel technique;Nanoscale Advances;2022

2. Realization of Novel Nanoscale-Junction Devices using Magnetic Thin-Film Edges;The Journal of The Institute of Electrical Engineers of Japan;2019-11-01

3. Magnetic Properties of Spin Quantum Cross Devices Utilizing Stray Magnetic Fields;MRS Proceedings;2014

4. Surface Roughness and Magnetic Properties of Co Ferromagnetic Thin Films on Polyethylene Naphthalate Organic Substrates;Journal of the Vacuum Society of Japan;2012

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