Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy-Reference-Cited by-同舟云学术

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

Published:2012-10-22 Issue:45 Volume:23 Page:455707
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Pantzas K,Patriarche G,Troadec D,Gautier S,Moudakir T,Suresh S,Largeau L,Mauguin O,Voss P L,Ougazzaden A

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=45/a=455707/pdf

Reference33 articles.

1. The Blue Laser Diode

2. Design and characterization of GaN∕InGaN solar cells

3. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

4. InGaN/GaN multiple quantum well solar cells with long operating wavelengths

5. Fabrication and characterization of InGaN p-i-n homojunction solar cell

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