Structural and chemical characterization of TiO2memristive devices by spatially-resolved NEXAFS-Reference-Cited by-同舟云学术

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Structural and chemical characterization of TiO2memristive devices by spatially-resolved NEXAFS

Published:2009-10-30 Issue:48 Volume:20 Page:485701
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Strachan John Paul,Joshua Yang J,Münstermann Ruth,Scholl Andreas,Medeiros-Ribeiro Gilberto,Stewart Duncan R,Stanley Williams R

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/20/i=48/a=485701/pdf

Reference22 articles.

1. Electrical phenomena in amorphous oxide films

2. Nanoionics-based resistive switching memories

3. Resistive switching in transition metal oxides

4. The missing memristor found

5. Memristor-The missing circuit element

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4. Thermally-driven reactivity of Li_0.35La_0.55TiO₃ solid electrolyte with LiCoO₂ cathode;Journal of Materials Chemistry A;2022

5. Nanoionic memristive phenomena in metal oxides: the valence change mechanism;Advances in Physics;2021-04-03

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