Growth of InAs/InAsSb heterostructured nanowires-Reference-Cited by-同舟云学术

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Growth of InAs/InAsSb heterostructured nanowires

Published:2012-03-02 Issue:11 Volume:23 Page:115606
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Ercolani Daniele,Gemmi Mauro,Nasi Lucia,Rossi Francesca,Pea Marialilia,Li Ang,Salviati Giancarlo,Beltram Fabio,Sorba Lucia

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=11/a=115606/pdf

Reference28 articles.

1. InAs/InSb nanowire heterostructures grown by chemical beam epitaxy

2. InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch

3. Uncooled high‐speed InSb field‐effect transistors

4. Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots

5. Hot-electron effects in InAs nanowire Josephson junctions

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2. Intrinsic Magnetic (EuIn)As Nanowire Shells with a Unique Crystal Structure;Nano Letters;2022-11-07

3. Atomic-Scale Observation of Unusual Dislocations in GaAs-GaAsSb Heterostructured Nanowires;ACS Applied Materials & Interfaces;2022-01-25

4. Near-infrared emission from spatially indirect excitons in type II ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires;Nanotechnology;2021-09-16

5. In-situ transmission electron microscopy for probing the dynamic processes in materials;Journal of Physics D: Applied Physics;2021-08-20

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