The effect of local atomic structure on the optical properties of GeSi self-assembled islands buried in silicon matrix-Reference-Cited by-同舟云学术

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The effect of local atomic structure on the optical properties of GeSi self-assembled islands buried in silicon matrix

Published:2007-02-14 Issue:11 Volume:18 Page:115711
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Demchenko I N,Lawniczak-Jablonska K,Kret S,Novikov A V,Laval J-Y,Zak M,Szczepanska A,Yablonskiy A N,Krasilnik Z F

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/18/i=11/a=115711/pdf

Reference20 articles.

1. Self-assembled Ge dots: Growth, characterization, ordering, and applications

2. Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)

3. Raman scattering and x-ray absorption studies of Ge–Si nanocrystallization

4. “Inverted hut” structure of Si–Ge nanocrystals studied by extended x-ray absorption fine structure method

5. Ge–Si intermixing in Ge quantum dots on Si(001) and Si(111)

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1. Tuning Optical Properties of Ge Nanocrystals by Si Shell;The Journal of Physical Chemistry C;2016-08-16

2. Group IV Quantum Dots and Nanoparticles;Springer Series in Optical Sciences;2014-11-06

3. Low-dimensional systems investigated by x-ray absorption spectroscopy: a selection of 2D, 1D and 0D cases;Journal of Physics D: Applied Physics;2013-09-26

4. Experimental observation of quantum confinement in the conduction band of PbS quantum dots;X-Ray Spectrometry;2013-04-24

5. XANES: observation of quantum confinement in the conduction band of colloidal PbS quantum dots;Journal of Physics: Conference Series;2013-04-22

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