Single ion implantation for single donor devices using Geiger mode detectors-Reference-Cited by-同舟云学术

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Single ion implantation for single donor devices using Geiger mode detectors

Published:2010-01-26 Issue:8 Volume:21 Page:085201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Bielejec E,Seamons J A,Carroll M S

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=8/a=085201/pdf

Reference21 articles.

1. Generation of single color centers by focused nitrogen implantation

2. Towards the implanting of ions and positioning of nanoparticles with nm spatial resolution

3. Deterministic Ultracold Ion Source Targeting the Heisenberg Limit

4. Scanning probe microscopy for silicon device fabrication

5. Atomic-Scale, All Epitaxial In-Plane Gated Donor Quantum Dot in Silicon

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