InGaN self-assembled quantum dots grown by metal–organic chemical vapour deposition with growth interruption-Reference-Cited by-同舟云学术

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InGaN self-assembled quantum dots grown by metal–organic chemical vapour deposition with growth interruption

Published:2006-02-27 Issue:6 Volume:17 Page:1713-1716
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Yao H H,Lu T C,Huang G S,Chen C Y,Liang W D,Kuo H C,Wang S C

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/17/i=6/a=028/pdf

Reference15 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. Gallium Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching

4. Excitonic enhancement of optical gain in quantum wells

5. GaN-based quantum dots

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1. Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped Pits;physica status solidi (RRL) – Rapid Research Letters;2022-09-25

2. Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy;Crystals;2021-10-27

3. Abnormal Stranski–Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices;ACS Applied Materials & Interfaces;2018-12-06

4. Investigations on morphology, growth mode and indium incorporation in MOCVD grown InGaN/n-GaN heterostructures;Optik;2018-12

5. Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells;Nanoscale Research Letters;2017-02-21

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