First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection-Reference-Cited by-同舟云学术

First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection

Published:2018-10-03 Issue:1 Volume:6 Page:016301
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Nguyen Thi Thu Thuy,Legallais Maxime,Morisot Fanny,Cazimajou Thibauld,Stambouli Valérie^ORCID,Mouis Mireille,Salem Bassem^ORCID,Ternon Céline^ORCID

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/2053-1591/aae0d5/pdf

Reference26 articles.

1. Recent advances in nanowires-based field-effect transistors for biological sensor applications

2. Silicon nanowires as field-effect transducers for biosensor development: A review

3. Fabrication of silicon nanowire networks for biological sensing

4. Silicon nanowire biosensor and its applications in disease diagnostics: A review

5. Nanonet as a scaffold with targeted functionalities

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