Abstract
Abstract
In this work, Ohmic contacts to n-type 3C-SiC grown on p-type Si substrate employing Ni layer and Ir/Ni/W/Ni multilayers were investigated. Specific contact resistances of 2.57 × 10–4 Ω · cm2 and 2.74 × 10–5 Ω · cm2 were achieved with Ni layer and Ir/Ni/W/Ni multilayers, respectively, at an annealing temperature of 1050 °C. Samples were characterized using XRD, AFM and SEM. The result indicates the W is effective as a carbon absorbing and stabilizing layer and the presence of Ir cap layer facilitates lowering the surface roughness. As a result, the thermal stability and contact surface morphology of Ir/Ni/W/Ni/3C-SiC is greatly improved compared with Ni/SiC contact.
Funder
Kunming Municipal Scientific Innovation Team Projects
Yunnan innovation team project
Yunnan Provincial Technical development and Research Projects for Scientific Research Institutes
National Key R & D Program of China
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials