Abstract
Abstract
Metalorganic chemical vapor deposition of approximately 300-nm thick epitaxial AlInN films with different alloy compositions was performed using a semi-relaxed c-plane GaInN template as an underlying substrate. The GaInN template consisted of a Ga0.98In0.02N film on a facet-structured GaN film formed on a c-plane sapphire substrate by the epitaxial lateral overgrowth technique, and its surface was treated with the chemical-mechanical polishing. It was observed that an Al0.835In0.165N film grown with an in-plane tensile strain exhibited a relatively smooth surface whereas an Al0.781In0.219N film grown with an in-plane compressive strain exhibited a granular morphology owing to a columnar polycrystalline structure. This phenomenon was quite similar to that observed for AlInN films grown non GaN/sapphire templates (GaN templates); therefore, it was speculated that the microstructure variation might have been caused by the in-plane compressive strain generated in AlInN films on the GaInN template in the same way as on GaN templates or FS-GaN substrates.
Funder
MEXT “Program for research and development of next-generation semiconductor to realize energy-saving society”
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献