Study of ultrathin SiO2 Interlayer wafer bonding for heterogeneous III–V/Si photonic integration-Reference-Cited by-同舟云学术

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Study of ultrathin SiO2 Interlayer wafer bonding for heterogeneous III–V/Si photonic integration

Published:2015-09-10 Issue:9 Volume:2 Page:096201
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Lee Chee-Wei,Liang Ying Shun,Ng Doris Keh-Ting,Yang Yi,Hnin Yu Yu Ko,Wang Qian

Funder

Data Storage Institute - A STAR

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/2053-1591/2/i=9/a=096201/pdf

Reference12 articles.

1. Heterogeneously integrated III-V laser on thin SOI with compact optical vertical interconnect access

2. Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

3. Electrically pumped hybrid AlGaInAs-silicon evanescent laser

4. Hybrid III–V/silicon laser with laterally coupled Bragg grating

5. Monolithic InGaAsP optoelectronic devices with silicon electronics

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1. Integrated Lasers on Silicon at Communication Wavelength: A Progress Review;Advanced Optical Materials;2022-08-26

2. Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times;AIP Advances;2021-11-01

3. Heterogeneously integrated III–V-on-Si microring resonators: a building block for programmable photonic integrated circuits;Journal of Optical Microsystems;2021-05-14

4. Sub-Micron Anisotropic InP-based III-V Semiconductor Material Deep Etching for On-Chip Laser Photonics Devices;Advanced Engineering Materials;2017-09-18

5. Comparison of III-V/Si on-chip lasers with etched facet reflectors;Applied Optics;2017-06-09

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